Electronic Components Datasheet Search |
|
FQP85N06 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
|
FQP85N06 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page Rev. A1. May 2001 ©2001 Fairchild Semiconductor Corporation Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 130 µH, I AS = 85A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 85A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300 µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature 6. Continuous Drain Current Calculated by Maximum Junction Temperature : Limited by Package Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 60 -- -- V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.06 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V -- -- 1 µA VDS = 48 V, TC = 150°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID =42.5 A -- 0.008 0.010 Ω gFS Forward Transconductance VDS = 25 V, ID = 42.5 A -- 54 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 3170 4120 pF Coss Output Capacitance -- 1150 1500 pF Crss Reverse Transfer Capacitance -- 165 220 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 30 V, ID = 42.5 A, RG = 25 Ω -- 40 90 ns tr Turn-On Rise Time -- 230 470 ns td(off) Turn-Off Delay Time -- 175 360 ns tf Turn-Off Fall Time -- 170 350 ns Qg Total Gate Charge VDS = 48 V, ID = 85 A, VGS = 10 V -- 86 112 nC Qgs Gate-Source Charge -- 20.5 -- nC Qgd Gate-Drain Charge -- 36 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 85 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 300 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 85 A -- -- 1.5 V trr Reverse Recovery Time VGS = 0 V, IS = 85 A, dIF / dt = 100 A/µs -- 70 -- ns Qrr Reverse Recovery Charge -- 135 -- nC (Note 4) (Note 4, 5) (Note 4, 5) (Note 4) |
Similar Part No. - FQP85N06 |
|
Similar Description - FQP85N06 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |