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IRF6618TR1PBF Datasheet(PDF) 1 Page - International Rectifier |
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IRF6618TR1PBF Datasheet(HTML) 1 Page - International Rectifier |
1 / 9 page www.irf.com 1 08/17/07 IRF6618PbF IRF6618TRPbF Applicable DirectFET Package/Layout Pad (see p.7, 8 for details) SQ SX ST MQ MX MT Fig 1. Typical On-Resistance vs. Gate-to-Source Voltage Fig 2. Total Gate Charge vs. Gate-to-Source Voltage Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.75mH, RG = 25Ω, IAS = 24A. VDSS VGS RDS(on) RDS(on) 30V max ±20V max 2.2m Ω@ 10V 3.4mΩ@ 4.5V DirectFET ISOMETRIC MT Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TC = 25°C Continuous Drain Current, VGS @ 10V e ID @ TA = 25°C Continuous Drain Current, VGS @ 10V e A ID @ TA = 70°C Continuous Drain Current, VGS @ 10V f IDM Pulsed Drain Current g EAS Single Pulse Avalanche Energy h mJ IAR Avalanche Current Ãg A 210 24 Max. 30 24 240 ±20 30 170 DirectFET Power MOSFET l RoHs Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques Description The IRF6618PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6618PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6618PbF has been optimized for parameters that are critical in synchronous buck converter’s SyncFET sockets. Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 43nC 15nC 4.0nC 46nC 28nC 1.64V 0 102030405060 QG Total Gate Charge (nC) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 VDS= 24V VDS= 15V ID= 24A 2 3 4 5 6 7 8 9 10 VGS, Gate -to -Source Voltage (V) 0 1 2 3 4 5 6 ID = 30A TJ = 25°C TJ = 125°C PD - 97240A |
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