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IRLMS6702TRPBF Datasheet(PDF) 1 Page - International Rectifier

Part # IRLMS6702TRPBF
Description  Generation V Technology
Download  8 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRLMS6702TRPBF Datasheet(HTML) 1 Page - International Rectifier

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IRLMS6702PbF
VDSS = -20V
RDS(on) = 0.20Ω
HEXFET® Power MOSFET
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET® power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The Micro6
™ package with its customized leadframe
produces a HEXFET® power MOSFET with RDS(on)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and RDS(on)
reduction enables a current-handling increase of
nearly 300% compared to the SOT-23.
Description
1/14/05
l
Generation V Technology
l
Micro6 Package Style
l
Ultra Low
RDS(on)
l
P-Channel MOSFET
l
Lead-Free
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TA = 25°C
Continuous Drain Current, VGS @ -4.5V
-2.4
ID @ TA = 70°C
Continuous Drain Current, VGS @ -4.5V
-1.9
A
IDM
Pulsed Drain Current 
-13
PD @TA = 25°C
Power Dissipation
1.7
W
Linear Derating Factor
13
mW/°C
VGS
Gate-to-Source Voltage
± 12
V
dv/dt
Peak Diode Recovery dv/dt ‚
5.0
V/ns
TJ,TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Top View
1
2
D
G
A
D
D
D
S
3
4
5
6
Parameter
Min.
Typ.
Max
Units
RθJA
Maximum Junction-to-Ambient
„
–––
–––
75
°C/W
Thermal Resistance Ratings
www.irf.com
1
Micro6
PD - 95224


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