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TGL41-33A-E3-96 Datasheet(PDF) 3 Page - Vishay Siliconix |
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TGL41-33A-E3-96 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 5 page TGL41-6.8A thru TGL41-200A www.vishay.com Vishay General Semiconductor Revision: 11-Dec-12 3 Document Number: 88403 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Peak Pulse Power Rating Curve Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature Fig. 3 - Pulse Waveform Fig. 4 - Typical Junction Capacitance Fig. 5 - Power Derating Curve Fig. 6 - Maximum Non-Repetitive Peak Forward Surge Current Uni-Directional Only td - Pulse Width 100 10 1 0.1 0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms TGL41-100 TGL200A TGL41-6.8 TGL91A Non-Repetitive Pulse Waveform shown in Fig. 3 T A = 25 °C TJ - Initial Temerature (°C) 100 50 25 0 025 50 100 150 200 75 75 125 175 t - Time (ms) 150 50 0 0 2.0 4.0 100 1.0 3.0 Peak Value I PPM 10/1000 µs Waveform as defined by R.E.A. Half Value - I PPM I PP 2 T J = 25 °C Pulse Width (t d) is defined as the Point where the Peak Current decays to 50 % of I PPM t r = 10 µs t d Measured at Stand-Off Voltage V WM VBR - Breakdown Voltage (V) 10 000 1000 100 10 1 10 100 1000 Uni-Directional Measured at Zero Bias T J = 25 °C f = 1.0 MHz V sig = 50 mVp-p TL - Lead Temerature (°C) 1.00 0.50 0.25 0 025 50 100 150 200 0.75 75 125 175 Number of Cycles at 60 Hz 50 10 0 1100 40 10 30 20 T J = TJ Max. 8.3 ms Single Half Sine-Wave |
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