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JANTXV2N6766 Datasheet(PDF) 1 Page - Microsemi Corporation

Part # JANTXV2N6766
Description  N-CHANNEL MOSFET Qualified per MIL-PRF-19500/543
Download  9 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

JANTXV2N6766 Datasheet(HTML) 1 Page - Microsemi Corporation

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T4-LDS-0101, Rev. 3 (121466)
©2012 Microsemi Corporation
Page 1 of 9
2N6764, 2N6766, 2N6768 and 2N6770
Available on
commercial
versions
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/543
Qualified Levels:
JAN, JANTX, and
JANTXV
DESCRIPTION
This family of 2N6764, 2N6766, 2N6768 and 2N6770 switching transistors are military
qualified up to the JANTXV level for high-reliability applications. These devices are also
available in a thru hole TO-254AA leaded package. Microsemi also offers numerous other
transistor products to meet higher and lower power ratings with various switching speed
requirements in both through-hole and surface-mount packages.
TO-204AE (TO-3)
Package
Also available in:
TO-254AA package
(leaded)
2N6764T1 & 2N6770T1
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
•
JEDEC registered 2N6764, 2N6766, 2N6768 and 2N6770 number series.
•
JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/543.
(See part nomenclature for all available options.)
•
RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
•
Low-profile metal can design.
•
Military and other high-reliability applications.
MAXIMUM RATINGS @ TA = +25 ºC unless otherwise stated
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters / Test Conditions
Symbol
Value
Unit
Junction & Storage Temperature Range
TJ &
Tstg
-55 to +150
°C
Thermal Resistance Junction-to-Case
RӨJC
0.83
oC/W
Total Power Dissipation
@ TA = +25 °C
@ TC = +25 °C
(1)
P T
4
150
W
Drain-Source Voltage, dc
2N6764
2N6766
2N6768
2N6770
V DS
100
200
400
500
V
Gate-Source Voltage, dc
V GS
± 20
V
Drain Current, dc @ TC = +25 ºC
(2)
2N6764
2N6766
2N6768
2N6770
ID1
38.0
30.0
14.0
12.0
A
Drain Current, dc @ TC = +100 ºC
(2)
2N6764
2N6766
2N6768
2N6770
ID2
24.0
19.0
9.0
7.75
A
Off-State Current (Peak Total Value)
(3)
2N6764
2N6766
2N6768
2N6770
IDM
152
120
56
48
A (pk)
Source Current
2N6764
2N6766
2N6768
2N6770
IS
38.0
30.0
14.0
12.0
A
Notes featured on next page.


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