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JANTXV2N6796E3 Datasheet(PDF) 4 Page - Microsemi Corporation

Part # JANTXV2N6796E3
Description  N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557
Download  9 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

JANTXV2N6796E3 Datasheet(HTML) 4 Page - Microsemi Corporation

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T4-LDS-0047, Rev. 3 (121483)
©2012 Microsemi Corporation
Page 4 of 9
2N6796, 2N6798, 2N6800, 2N6802
ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted (continued)
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Gate Charge:
On-State Gate Charge
VGS = 10 V, ID = 8.0 A, VDS = 50 V
VGS = 10 V, ID = 5.5 A, VDS = 50 V
VGS = 10 V, ID = 3.0 A, VDS = 50 V
VGS = 10 V, ID = 2.5 A, VDS = 50 V
2N6796
2N6798
2N6800
2N6802
Qg(on)
28.51
42.07
34.75
33.00
nC
Gate to Source Charge
VGS = 10 V, ID = 8.0 A, VDS = 50 V
VGS = 10 V, ID = 5.5 A, VDS = 50 V
VGS = 10 V, ID = 3.0 A, VDS = 50 V
VGS = 10 V, ID = 2.5 A, VDS = 50 V
2N6796
2N6798
2N6800
2N6802
Qgs
6.34
5.29
5.75
4.46
nC
Gate to Drain Charge
VGS = 10 V, ID = 8.0 A, VDS = 50 V
VGS = 10 V, ID = 5.5 A, VDS = 50 V
VGS = 10 V, ID = 3.0 A, VDS = 50 V
VGS = 10 V, ID = 2.5 A, VDS = 50 V
2N6796
2N6798
2N6800
2N6802
Qgd
16.59
28.11
16.59
28.11
nC
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Turn-on delay time
ID = 8.0 A, VGS = +10 V, RG = 7.5 Ω, VDD = 30 V
ID = 5.5 A, VGS = +10 V, RG = 7.5 Ω, VDD = 77 V
ID = 3.0 A, VGS = +10 V, RG = 7.5 Ω, VDD = 176 V
ID = 2.5 A, VGS = +10 V, RG = 7.5 Ω, VDD = 225 V
2N6796
2N6798
2N6800
2N6802
td(on)
30
ns
Rinse time
ID = 8.0 A, VGS = +10 V, RG = 7.5 Ω, VDD = 30 V
ID = 5.5 A, VGS = +10 V, RG = 7.5 Ω, VDD = 77 V
ID = 3.0 A, VGS = +10 V, RG = 7.5 Ω, VDD = 176 V
ID = 2.5 A, VGS = +10 V, RG = 7.5 Ω, VDD = 225 V
2N6796
2N6798
2N6800
2N6802
tr
75
50
35
30
ns
Turn-off delay time
ID = 8.0 A, VGS = +10 V, RG = 7.5 Ω, VDD = 30 V
ID = 5.5 A, VGS = +10 V, RG = 7.5 Ω, VDD = 77 V
ID = 3.0 A, VGS = +10 V, RG = 7.5 Ω, VDD = 176 V
ID = 2.5 A, VGS = +10 V, RG = 7.5 Ω, VDD = 225 V
2N6796
2N6798
2N6800
2N6802
td(off)
40
50
55
55
ns
Fall time
ID = 8.0 A, VGS = +10 V, RG = 7.5 Ω, VDD = 30 V
ID = 5.5 A, VGS = +10 V, RG = 7.5 Ω, VDD = 77 V
ID = 3.0 A, VGS = +10 V, RG = 7.5 Ω, VDD = 176 V
ID = 2.5 A, VGS = +10 V, RG = 7.5 Ω, VDD = 225 V
2N6796
2N6798
2N6800
2N6802
tf
45
40
35
30
ns
Diode Reverse Recovery Time
di/dt ≤ 100 A/µs, V
DD
≤ 50 V, I
F = 8.0 A
di/dt ≤ 100 A/µs, V
DD
≤ 50 V, I
F = 5.5 A
di/dt ≤ 100 A/µs, V
DD
≤ 50 V, I
F = 3.0 A
di/dt ≤ 100 A/µs, V
DD
≤ 50 V, I
F = 2.5 A
2N6796
2N6798
2N6800
2N6802
trr
300
500
700
900
ns


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