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AD674BJN Datasheet(PDF) 4 Page - Analog Devices |
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AD674BJN Datasheet(HTML) 4 Page - Analog Devices |
4 / 12 page REV. C –4– AD674B/AD774B TIMING—STAND ALONE MODE (Figures 4a and 4b) J, K, A, B Grades T Grade Parameter Symbol Min Typ Max Min Typ Max Unit Data Access Time tDDR 150 150 ns Low R/ C Pulsewidth tHRL 50 50 ns STS Delay from R/ C tDS 200 225 ns Data Valid After R/ C Low tHDR 25 25 ns STS Delay After Data Valid tHS 30 200 600 30 200 600 ns High R/ C Pulsewidth tHRH 150 150 ns Specifications subject to change without notice. ABSOLUTE MAXIMUM RATINGS * VCC to Digital Common . . . . . . . . . . . . . . . . . . . 0 to +16.5 V VEE to Digital Common . . . . . . . . . . . . . . . . . . . . 0 to –16.5 V VLOGIC to Digital Common . . . . . . . . . . . . . . . . . . . 0 to +7 V Analog Common to Digital Common . . . . . . . . . . . . . . . ±1 V Digital Inputs to Digital Common . . . –0.5 V to VLOGIC +0.5 V Analog Inputs to Analog Common . . . . . . . . . . . . VEE to VCC 20 VIN to Analog Common . . . . . . . . . . . . . . . . . . . . . . ±24 V REF OUT . . . . . . . . . . . . . . . . . . Indefinite Short to Common . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Momentary Short to VCC Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 175 °C Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . 825 mW Lead Temperature, Soldering (10 sec) . . . . . . . . . . . . . 300 °C Storage Temperature . . . . . . . . . . . . . . . . . . –65 °C to +150°C *Stresses above those listed under Absolute Maximum Ratings may cause perma- nent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. R/ C STS DB11–DB0 DATA VALID DATA VALID tHRL tDS HIGH–Z tHS tHDR tC Flgure 4a. Standalone Mode Timing Low Pulse R/ C R/ C STS DB11–DB0 HIGH–Z HIGH–Z DATA VALID tHRH tDS tDDR tHDR tC tHL Figure 4b. Standalone Mode Timing High Pulse for R/ C WARNING! ESD SENSITIVE DEVICE CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD674B/AD774B features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. ORDERING GUIDE Conversion INL Package Package Model l Temperature Time (max) (TMIN to TMAX) Description Option 2 AD674BJN 0 °C to 70°C 15 µs ±1 LSB Plastic DIP N-28 AD674BKN 0 °C to 70°C 15 µs ±1/2 LSB Plastic DIP N-28 AD674BAR –40 °C to +85°C 15 µs ±1 LSB Plastic SOIC R-28 AD674BBR –40 °C to +85°C 15 µs ±1/2 LSB Plastic SOIC R-28 AD674BAD –40 °C to +85°C 15 µs ±1 LSB Ceramic DIP D-28 AD674BBD –40 °C to +85°C 15 µs ±1/2 LSB Ceramic DIP D-28 AD674BTD –55 °C to +125°C 15 µs ±1 LSB Ceramic DIP D-28 AD774BJN 0 °C to 70°C8 µs ±1 LSB Plastic DIP N-28 AD774BKN 0 °C to 70°C8 µs ±1/2 LSB Plastic DIP N-28 AD774BAR –40 °C to +85°C8 µs ±1 LSB Plastic SOIC R-28 AD774BBR –40 °C to +85°C8 µs ±1/2 LSB Plastic SOIC R-28 AD774BAD –40 °C to +85°C8 µs ±1 LSB Ceramic DIP D-28 AD774BBD –40 °C to +85°C8 µs ±1/2 LSB Ceramic DIP D-28 AD774BTD –55 °C to +125°C8 µs ±1 LSB Ceramic DIP D-28 NOTES 1For details on grade and package offerings screened in accordance with MIL-STD-883, refer to the Analog Devices Military Products Databook or the current AD674B/ AD774B/883B data sheet. 2N = Plastic DIP; D = Hermetic DIP; R = Plastic SOIC. |
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