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MCR12DSN-1G Datasheet(PDF) 1 Page - ON Semiconductor

Part # MCR12DSN-1G
Description  Sensitive Gate Silicon Controlled Rectifiers
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MCR12DSN-1G Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2013
June, 2013 − Rev. 7
1
Publication Order Number:
MCR12DSM/D
MCR12DSM, MCR12DSN
Sensitive Gate Silicon
Controlled Rectifiers
Reverse Blocking Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control; process control; temperature, light
and speed control; CDI (Capacitive Discharge Ignition); and small
engines.
Features
Small Size
Passivated Die for Reliability and Uniformity
Low Level Triggering and Holding Characteristics
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings:
Human Body Model, 3B
u 8000 V
Machine Model, C
u 400 V
These are Pb−Free Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to 110°C, Sine Wave, 50 Hz to
60 Hz)
MCR12DSM
MCR12DSN
VDRM,
VRRM
600
800
V
On−State RMS Current
(180° Conduction Angles; TC = 75°C)
IT(RMS)
12
A
Average On−State Current
(180° Conduction Angles; TC = 75°C)
IT(AV)
7.6
A
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, TJ = 110°C)
ITSM
100
A
Circuit Fusing Consideration (t = 8.3 msec)
I2t
41
A2sec
Forward Peak Gate Power
(Pulse Width ≤ 10 msec, TC = 75°C)
PGM
5.0
W
Forward Average Gate Power
(t = 8.3 msec, TC = 75°C)
PG(AV)
0.5
W
Forward Peak Gate Current
(Pulse Width ≤ 10 msec, TC = 75°C)
IGM
2.0
A
Operating Junction Temperature Range
TJ
−40 to 110
°C
Storage Temperature Range
Tstg
−40 to 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded.
SCRs
12 AMPERES RMS
600 − 800 VOLTS
K
G
A
PIN ASSIGNMENT
1
2
3
Anode
Gate
Cathode
4
Anode
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
IPAK
CASE 369D
STYLE 4
DPAK
CASE 369C
STYLE 4
MARKING
DIAGRAMS
Y
= Year
WW
= Work Week
R12DSx
= Device Code
x= M or N
G= Pb−Free Package
1 2
3
4
YWW
R1
2DSxG
1
2
3
4
YWW
R1
2DSxG


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