STM32L152VB datasheet(75/121 Pages) STMICROELECTRONICS

Part #	STM32L152VB

Description	Ultra-low-power 32-bit MCU ARM-based Cortex-M3

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STM32L151x6/8/B, STM32L152x6/8/B

Electrical characteristics

Doc ID 17659 Rev 8

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6.3.9

EMC characteristics

Susceptibility tests are performed on a sample basis during device characterization.

Functional EMS (electromagnetic susceptibility)

While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the

device is stressed by two electromagnetic events until a failure occurs. The failure is

indicated by the LEDs:

●

Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until

a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.

●

FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD and

VSS through a 100 pF capacitor, until a functional disturbance occurs. This test is

compliant with the IEC 61000-4-4 standard.

A device reset allows normal operations to be resumed.

The test results are given in Table 37. They are based on the EMS levels and classes

defined in application note AN1709.

Table 36.

Flash memory, data EEPROM endurance and data retention

Symbol

Parameter

Conditions

Value

Unit

Min(1)

1. Based on characterization not tested in production.

Typ Max

NCYC

(2)

Cycling (erase / write )

Program memory

TA = -40°C to

105 °C

10

kcycles

Cycling (erase / write )

EEPROM data memory

300

tRET

(2)

2. Characterization is done according to JEDEC JESD22-A117.

Data retention (program memory) after

10 kcycles at TA = 85 °C

TRET = +85 °C

30

years

Data retention (EEPROM data memory)

after 300 kcycles at TA = 85 °C

30

Data retention (program memory) after

10 kcycles at TA = 105 °C

TRET = +105 °C

10

Data retention (EEPROM data memory)

after 300 kcycles at TA = 105 °C

10

Table 37.

EMS characteristics

Symbol

Parameter

Conditions

Level/

Class

VFESD

Voltage limits to be applied on any I/O pin to

induce a functional disturbance

VDD = 3.3 V, LQFP100, TA = +25 °C,

fHCLK = 32 MHz

conforms to IEC 61000-4-2

2B

VEFTB

Fast transient voltage burst limits to be

applied through 100 pF on VDD and VSS

pins to induce a functional disturbance

VDD = 3.3 V, LQFP100, TA = +25 °C,

fHCLK = 32 MHz

conforms to IEC 61000-4-4

4A

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