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STM32L152VB Datasheet(PDF) 75 Page - STMicroelectronics |
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STM32L152VB Datasheet(HTML) 75 Page - STMicroelectronics |
75 / 121 page STM32L151x6/8/B, STM32L152x6/8/B Electrical characteristics Doc ID 17659 Rev 8 75/121 6.3.9 EMC characteristics Susceptibility tests are performed on a sample basis during device characterization. Functional EMS (electromagnetic susceptibility) While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the device is stressed by two electromagnetic events until a failure occurs. The failure is indicated by the LEDs: ● Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard. ● FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD and VSS through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant with the IEC 61000-4-4 standard. A device reset allows normal operations to be resumed. The test results are given in Table 37. They are based on the EMS levels and classes defined in application note AN1709. Table 36. Flash memory, data EEPROM endurance and data retention Symbol Parameter Conditions Value Unit Min(1) 1. Based on characterization not tested in production. Typ Max NCYC (2) Cycling (erase / write ) Program memory TA = -40°C to 105 °C 10 kcycles Cycling (erase / write ) EEPROM data memory 300 tRET (2) 2. Characterization is done according to JEDEC JESD22-A117. Data retention (program memory) after 10 kcycles at TA = 85 °C TRET = +85 °C 30 years Data retention (EEPROM data memory) after 300 kcycles at TA = 85 °C 30 Data retention (program memory) after 10 kcycles at TA = 105 °C TRET = +105 °C 10 Data retention (EEPROM data memory) after 300 kcycles at TA = 105 °C 10 Table 37. EMS characteristics Symbol Parameter Conditions Level/ Class VFESD Voltage limits to be applied on any I/O pin to induce a functional disturbance VDD = 3.3 V, LQFP100, TA = +25 °C, fHCLK = 32 MHz conforms to IEC 61000-4-2 2B VEFTB Fast transient voltage burst limits to be applied through 100 pF on VDD and VSS pins to induce a functional disturbance VDD = 3.3 V, LQFP100, TA = +25 °C, fHCLK = 32 MHz conforms to IEC 61000-4-4 4A |
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