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IS43DR16320B-25DBL Datasheet(PDF) 1 Page - Integrated Silicon Solution, Inc

Part # IS43DR16320B-25DBL
Description  512Mb (x8, x16) DDR2 SDRAM
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS43DR16320B-25DBL Datasheet(HTML) 1 Page - Integrated Silicon Solution, Inc

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IS43/46DR86400B, IS43/46DR16320B
Integrated Silicon Solution, Inc. – www.issi.com –
1
Rev. I, 8/01/2012
512Mb (x8, x16) DDR2 SDRAM
AUGUST 2012
FEATURES
• Clock frequency up to 400MHz
• Posted CAS
• Programmable CAS Latency: 3, 4, 5 and 6
• Programmable Additive Latency: 0, 1, 2, 3, 4 and 5
• Write Latency = Read Latency-1
• Programmable Burst Sequence: Sequential or
Interleave
• Programmable Burst Length: 4 and 8
• Automatic and Controlled Precharge Command
• Power Down Mode
• Auto Refresh and Self Refresh
• Refresh Interval: 7.8 µs (8192 cycles/64 ms)
• OCD (Off-Chip Driver Impedance Adjustment)
• ODT (On-Die Termination)
• Weak Strength Data-Output Driver Option
• Bidirectional differential Data Strobe (Single-
ended data-strobe is an optional feature)
• On-Chip DLL aligns DQ and DQs transitions with
CK transitions
• Differential clock inputs CK and CK#
• VDD and VDDQ = 1.8V ± 0.1V
• PASR (Partial Array Self Refresh)
• SSTL_18 interface
• tRAS lockout supported
• Read Data Strobe supported (x8 only)
• Internal four bank operations with single pulsed
RAS
• Operating temperature:
Commercial (TA = 0°C to +70°C ; TC = 0°C to +85°C)
Industrial (TA = -40°C to +85°C; TC = -40°C to +95°C)
Automotive, A1 (TA = -40°C to +85°C; TC = -40°C to
+95°C)
Automotive, A2 (TA = -40°C to +105°C; TC = -40°C
to +105°C)
OPTIONS
• Configuration:
− 64Mx8 (16M x 8 x 4 banks)
− 32Mx16 (8M x 16 x 4 banks)
• Package:
− 60-ball TW-BGA for x8
− 84-ball TW-BGA for x16
ADDRESS TABLE
Parameter
64Mx8
32Mx16
Row Addressing
A0-A13
A0-A12
Column Addressing
A0-A9
A0-A9
Bank Addressing
BA0-BA1
BA0-BA1
Precharge Addressing
A10
A10
Clock Cycle Timing
-5B
-37C
-3D
-25E
-25D
Units
Speed Grade
DDR2-400B
DDR2-533C
DDR2-667D
DDR2-800E
DDR2-800D
CL-tRCD-tRP
3-3-3
4-4-4
5-5-5
6-6-6
5-5-5
tCK
tCK (CL=3)
5
5
5
5
5
ns
tCK (CL=4)
5
3.75
3.75
3.75
3.75
ns
tCK (CL=5)
5
3.75
3
3
2.5
ns
tCK (CL=6)
5
3.75
3
2.5
2.5
ns
Frequency (max)
200
266
333
400
400
MHz
Note: The -5B device specification is shown for reference only.
Copyright © 2012 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can
reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such
applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances


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