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IS64WV25616BLL-10CTA3 Datasheet(PDF) 6 Page - Integrated Silicon Solution, Inc |
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IS64WV25616BLL-10CTA3 Datasheet(HTML) 6 Page - Integrated Silicon Solution, Inc |
6 / 21 page 6 Integrated Silicon Solution, Inc. — www.issi.com Rev. G 07/15/2010 IS61WV25616ALL/ALS, IS61WV25616BLL/BLS, IS64WV25616BLL/BLS ABSOLUTE MAXIMUM RATINGS(1) Symbol Parameter Value Unit VTERM Terminal Voltage with Respect to GND –0.5 to VDD + 0.5 V VDD VDD Relates to GND –0.3 to 4.0 V TSTG Storage Temperature –65 to +150 °C PT Power Dissipation 1.0 W Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. CAPACITANCE(1,2) Symbol Parameter Conditions Max. Unit CIN Input Capacitance VIN = 0V 6 pF CI/O Input/Output Capacitance VOUT = 0V 8 pF Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 3.3V. |
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