© 2008 Microchip Technology Inc.
Erasing Flash Program Memory
The minimum erase block is 32 words or 64 bytes. Only
through the use of an external programmer, or through
ICSP control, can larger blocks of program memory be
bulk erased. Word erase in the Flash array is not
When initiating an erase sequence from the micro-
controller itself, a block of 64 bytes of program memory
is erased. The Most Significant 16 bits of the
TBLPTR<21:6> point to the block being erased.
TBLPTR<5:0> are ignored.
The EECON1 register commands the erase operation.
The EEPGD bit must be set to point to the Flash
program memory. The WREN bit must be set to enable
write operations. The FREE bit is set to select an erase
For protection, the write initiate sequence for EECON2
must be used.
A long write is necessary for erasing the internal Flash.
Instruction execution is halted while in a long write
cycle. The long write will be terminated by the internal
FLASH PROGRAM MEMORY
The sequence of events for erasing a block of internal
program memory location is:
Load Table Pointer register with address of row
Set the EECON1 register for the erase operation:
• set EEPGD bit to point to program memory;
• clear the CFGS bit to access program memory;
• set WREN bit to enable writes;
• set FREE bit to enable the erase.
Write 55h to EECON2.
Write 0AAh to EECON2.
Set the WR bit. This will begin the row erase
The CPU will stall for duration of the erase
(about 2 ms using internal timer).
ERASING A FLASH PROGRAM MEMORY ROW
; load TBLPTR with the base
; address of the memory block
; point to Flash program memory
; access Flash program memory
; enable write to memory
; enable Row Erase operation
; disable interrupts
; write 55h
; write 0AAh
; start erase (CPU stall)
; re-enable interrupts