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MAGX-001090-600L00 Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc. |
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MAGX-001090-600L00 Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc. |
1 / 7 page GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty Rev. V5 1 11 MAGX-001090-600L00 MAGX-001090-600L0S M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport Features GaN on SiC Depletion-Mode Transistor Technology Internally Matched Common-Source Configuration Broadband Class AB Operation RoHS* Compliant and 260°C Reflow Compatible +50 V Typical Operation MTTF = 600 years (TJ < 200°C) Applications Civilian Air Traffic Control (ATC), L-Band secondary radar for IFF and Mode-S avionics. Military radar for IFF and Data Links. Description The MAGX-001090-600L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistor optimized for pulsed avionics and radar applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over a wide bandwidth for today’s demanding application needs. High breakdown voltages allow for reliable and stable operation under more extreme mismatch load conditions compared with older semiconductor technologies. * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. MAGX-001090-600L00 MAGX-001090-600L0S Part Number Description MAGX-001090-600L00 Flanged MAGX-001090-600L0S Flangeless MAGX-A11090-600L00 1.03 - 1.09 GHz Evaluation Board Ordering Information |
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