GaN on SiC HEMT Pulsed Power Transistor

500W Peak, 1200-1400 MHz, 300 µs Pulse, 10% Duty

MAGX-001214-500L00

MAGX-001214-500L0S

1

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• North America Tel: 800.366.2266 /

Fax: 978.366.2266

• Europe

Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific

Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Rev. V1

Features

 GaN on SiC Depletion-Mode Transistor Technology

 Internally Matched

 Common-Source Configuration

 Broadband Class AB Operation

 RoHS* Compliant and 260 °C Reflow Compatible

 +50 V Typical Operation

Applications

 L-Band pulsed radar

Freq.

Gain

Eff.

RL

Droop

+1dB OD

(MHz)

(W)

(dB)

(A)

(%)

(dB)

(dB)

(W)

1200

5.15

19.86

17.7

56.2

-12.7

0.29

568

1250

5.35

19.69

16.7

59.5

-10.3

0.30

561

1300

5.69

19.43

17.2

57.9

-10.9

0.33

554

1350

5.86

19.31

17.9

55.7

-15.3

0.36

547

1400

5.85

19.22

18.1

54.8

-17.5

0.38

549

MAGX-001214-500L00

MAGX-001214-500L0S

Description

The MAGX-001214-500L00 is a gold metalized matched

Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power

transistor optimized for pulsed L-Band radar applications.

Using state of the art wafer fabrication processes, these high

performance transistors provide high gain, efficiency,

bandwidth, and ruggedness over a wide bandwidth for

today’s demanding application needs.

High breakdown

voltages allow for reliable and stable operation under more

extreme mismatch load conditions compared with older

semiconductor technologies.

* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.

Part Number

Description

MAGX-001214-500L00

500 W GaN Power Transistor (Flanged)

MAGX-001214-500L0S

500 W GaN Power Transistor (Flangeless)

MAGX-001214-SB3PPR

1.2 - 1.4 GHz Evaluation Board

Ordering Information