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HUFA75344P3 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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HUFA75344P3 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 10 page ©2003 Fairchild Semiconductor Corporation HUFA75344G3, HUFA75344P3, HUFA75344S3S, HUFA75344S3 Rev. B1 Absolute Maximum Ratings TC = 25 oC, Unless Otherwise Specified UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 55 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 55 V Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V Drain Current Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM 75 Figure 4 A Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Figure 6 Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 285 1.90 W W/oC Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 175 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25 oC to 150oC. Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 11) 55 - - V Zero Gate Voltage Drain Current IDSS VDS = 50V, VGS = 0V - - 1 µA VDS = 45V, VGS = 0V, TC = 150 oC- - 250 µA Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA ON STATE SPECIFICATIONS Gate to Source Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA (Figure 10) 2 - 4 V Drain to Source On Resistance rDS(ON) ID = 75A, VGS = 10V (Figure 9) - 0.0065 0.008 Ω THERMAL SPECIFICATIONS Thermal Resistance Junction to Case RθJC (Figure 3) - - 0.52 oC/W Thermal Resistance Junction to Ambient RθJA TO-247 - - 30 oC/W TO-220, TO-263, TO-262 - - 62 oC/W SWITCHING SPECIFICATIONS (VGS = 10V) Turn-On Time tON VDD = 30V, ID ≅ 75A, RL = 0.4Ω, VGS = 10V, RGS = 3.0Ω -- 195 ns Turn-On Delay Time td(ON) -16 - ns Rise Time tr -112 - ns Turn-Off Delay Time td(OFF) -37 - ns Fall Time tf -28 - ns Turn-Off Time tOFF -- 100 ns GATE CHARGE SPECIFICATIONS Total Gate Charge Qg(TOT) VGS = 0V to 20V VDD = 30V, ID ≅ 75A, RL = 0.4Ω Ig(REF) = 1.0mA (Figure 13) -175 210 nC Gate Charge at 10V Qg(10) VGS = 0V to 10V - 90 108 nC Threshold Gate Charge Qg(TH) VGS = 0V to 2V - 5.9 7.0 nC Gate to Source Gate Charge Qgs -14 - nC Reverse Transfer Capacitance Qgd -39 - nC CAPACITANCE SPECIFICATIONS Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 12) -3200 - pF Output Capacitance COSS -1170 - pF Reverse Transfer Capacitance CRSS -310 - pF HUFA75344G3, HUFA75344P3, HUFA75344S3S |
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