©2001 Fairchild Semiconductor Corporation

HUFA75637P3, HUFA75637S3S Rev. B

HUFA75637P3, HUFA75637S3S

44A, 100V, 0.030 Ohm, N-Channel,

UltraFET® Power MOSFET

Packaging

Symbol

Features

• Ultra Low On-Resistance

• Simulation Models

- Temperature Compensated PSPICE® and SABER™

Electrical Models

- Spice and SABER Thermal Impedance Models

- www.fairchildsemi.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

Ordering Information

Absolute Maximum Ratings

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy

of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

JEDEC TO-220AB

JEDEC TO-263AB

DRAIN

(FLANGE)

DRAIN

SOURCE

GATE

HUFA75637P3

GATE

SOURCE

DRAIN

(FLANGE)

HUFA75637S3S

D

G

S

PART NUMBER

PACKAGE

BRAND

HUFA75637P3

TO-220AB

75637P

HUFA75637S3S

TO-263AB

75637S

NOTE: When ordering, use the entire part number. Add the suffix T

to obtain the variant in tape and reel, e.g., HUFA75637S3ST.

HUFA75637P3, HUFA75637S3S

UNITS

100

V

100

V

±20

V

Drain Current

44

31

Figure 4

A

A

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS

Figures 6, 14, 15

155

1.03

W

-55 to 175

Maximum Temperature for Soldering

300

260

NOTE:

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Data Sheet

December 2001