CR8CM-12A

Preliminary

R07DS1034EJ0300 Rev.3.00

Page 2 of 7

Jul 30, 2013

Parameter

Symbol

Ratings

Unit

Conditions

RMS on-state current

12.6

A

Average on-state current

8

A

Commercial frequency, sine half wave

180° conduction, Tc = 99°C

Note1

Surge on-state current

120

A

50 Hz sine half wave 1 full cycle,

peak value, non-repetitive

I

I

72

A

Value corresponding to 1 cycle of half

wave 50 Hz, surge on-state current

Peak gate power dissipation

5

W

Average gate power dissipation

0.5

W

Peak gate forward voltage

6

V

Peak gate reverse voltage

10

V

Peak gate forward current

2

A

Junction temperature

Tj

– 40 to +125

°C

Storage temperature

Tstg

– 40 to +125

°C

Mass

—

2.1

g

Typical value

Electrical Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test conditions

Repetitive peak reverse current

—

—

2.0

mA

Repetitive peak off-state current

—

—

2.0

mA

On-state voltage

—

—

1.4

V

instantaneous value

Gate trigger voltage

—

—

1.0

V

Gate non-trigger voltage

0.2

—

—

V

Gate trigger current

—

—

15

mA

Holding current

—

15

—

mA

Thermal resistance

—

—

2.0

°C/W

Junction to case

Note1 Note2

Notes: 1. Case temperature is measured at anode tab 1.5 mm away from the molded case.