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HITK0303MP Datasheet(PDF) 1 Page - Renesas Technology Corp |
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HITK0303MP Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 7 page R07DS0484EJ0200 Rev.2.00 Page 1 of 6 May 09, 2013 Preliminary Datasheet HITK0303MP 30V, 3.7A, 53m max. Silicon N Channel MOS FET Power Switching Features Low on-resistance RDS(on) = 42 m typ (VGS = 10 V, ID = 1.8 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Source 2. Gate 3. Drain S D G 2 1 3 1 2 3 Note: Marking is “MV”. Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS 20 V Drain current ID 3.7 A Drain peak current ID(Pulse) Note1 5 A Body - drain diode reverse drain current IDR 3.7 A Channel dissipation Pch Note2 0.8 W Channel temperature Tch 150 C Storage temperature Tstg –55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. When using the glass epoxy board (FR-4: 40 40 1 mm) R07DS0484EJ0200 Rev.2.00 May 09, 2013 |
Similar Part No. - HITK0303MP_13 |
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Similar Description - HITK0303MP_13 |
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