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L6585DE Datasheet(PDF) 9 Page - STMicroelectronics |
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L6585DE Datasheet(HTML) 9 Page - STMicroelectronics |
9 / 33 page L6585DE Electrical characteristics 9/33 Symbol Pin Parameter Test condition Min. Typ. Max. Unit CTR pin DIS CTR Shutdown threshold Falling edge 0.75 V Hysteresis 120 mV PFOV CTR Dynamic PFC over- voltage Rising edge 3.4 V Hysteresis 140 mV CTR Available range as tracking reference Lower threshold (falling) 1.7 V Hysteresis 120 mV Higher threshold (rising) 3.4 V Hysteresis 140 mV PFC section – current sense comparator ICS PFCS Input bias current VCS = 0 V -1 µA tLEB PFCS Leading edge blanking (2) 100 200 300 ns VCSstop PFCS PFC stop threshold VCTR 1.65 1.75 1.85 V td(H-L) PFCS Delay to output 120 ns VCSclamp PFCS Current sense reference clamp VCOMP = Upper clamp 1 1.08 1.16 V PFC section – zero current detector VZCDH ZCD Upper clamp voltage IZCD = 2.5 mA 5 V VZCDL ZCD Lower clamp voltage IZCD = -2.5 mA -0.3 0 0.3 V VZCDA ZCD Arming voltage (positive-going edge) (2) 1.4 V VZCDT ZCD Triggering voltage (negative-going edge) (2) 0.7 V IZCDb ZCD Input bias current VZCD = 1 to 4.5 V 1 µA IZCDsrc ZCD Source current capability -4 mA IZCDsnk ZCD Sink current capability 4 mA PFC section – gate driver PFG Output high/low ISINK = 10 mA 0.2 V ISOURCE = 10 mA 14.5 V tf PFG Fall time 40 90 ns tr PFG Rise time 90 140 ns ISINK PFG Peak sink current 475 600 mA ISOURCE PFG Peak source current 200 300 mA PFG Pull-down resistor 10 k Ω Table 4. Electrical characteristics (continued) |
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