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SO-20 Datasheet(PDF) 11 Page - STMicroelectronics

Part # SO-20
Description  Combo IC for PFC and ballast control
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

SO-20 Datasheet(HTML) 11 Page - STMicroelectronics

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L6585DE
Electrical characteristics
11/33
Symbol
Pin
Parameter
Test condition
Min.
Typ.
Max.
Unit
VW
EOL
Half window amplitude
220 k
Ω < R
EOLP <
270 k
Ω
+250
mV
-240
22 k
Ω < R
EOLP < 27 kΩ
+160
-150
REOLP > 620 kΩ
720
75 k
Ω < R
EOLP < 91 kΩ
240
EOL
Sink/source capability
5.5
µA
Half bridge section – Half-bridge current sense
HBCSH
HBCS
Frequency increase
VEOI < 1.9 V (ignition)
1.53
1.6
1.66
V
HBCSL
HBCS
Threshold
VEOI > 1.9 V (run mode)
0.98
1.05
1.12
V
HBCSH,test
HBCS
Shut down threshold
during first low side on
time after Tch cycle
VEOI < 1.9 V (ignition)
1.05
V
HBCSL,test
HBCS
VEOI > 1.9 V (run mode)0.82
V
HBCSAS
HBCS
Anti saturation threshold
Ignition
2.75
V
tLEB,HBCS
HBCS
Leading edge blanking
Ignition
270
ns
HBCSCM
HBCS
Capacitive mode
threshold
Run mode,
Tpulse > 200 ns
1.53
1.6
1.66
V
HBCSHS
HBCS
Hard switching detector
Run mode,
Tpulse > 40 ns
2.75
V
Hysteresis
450
mV
NHS
Hard switching events
before shutdown
Run mode
350
Half bridge section – Low side gate driver
LSD
Output low voltage
ISINK = 10 mA
0.3
V
LSD
Output high voltage
ISOURCE = 10 mA
14.5
V
LSD
Peak source current
200
290
mA
LSD
Peak sink current
400
480
mA
TRISE
LSD
Rise time
120
ns
TFALL
LSD
Fall time
80
ns
LSD
Pull-down resistor
45
k
Ω
Half bridge section – High side gate driver (voltages referred to OUT)
HSD
Output low voltage
ISINK = 10 mA
VOUT +
0.3
V
HSD
Output high voltage
ISOURCE = 10 mA
VBOOT
0.5
V
HSD
Peak source current
200
290
mA
HSD
Peak sink current
400
480
mA
Table 4.
Electrical characteristics (continued)


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