Low Capacitance, Low Charge Injection,

±15 V/+12 V iCMOS Quad SPST Switches

Enhanced Product

ADG1212-EP

Rev. 0

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FEATURES

1 pF off capacitance

2.6 pF on capacitance

<1 pC charge injection

33 V supply range

120 Ω on resistance

Fully specified at ±15 V, +12 V

3 V logic-compatible inputs

Rail-to-rail operation

16-lead TSSOP

Typical power consumption: <0.03 μW

ENHANCED PRODUCT FEATURES

Supports defense and aerospace applications (AQEC

standard)

Military temperature range: −55°C to +125°C

Controlled manufacturing baseline

One assembly/test site

One fabrication site

Enhanced product change notification

Qualification data available on request

APPLICATIONS

Automatic test equipment

Data acquisition systems

Battery-powered systems

Sample-and-hold systems

Audio signal routing

Video signal routing

Communication systems

FUNCTIONAL BLOCK DIAGRAM

ADG1212-EP

NOTES

1. SWITCHES SHOWN ARE

FOR LOGIC 1 INPUT.

S1

IN1

IN2

IN3

IN4

D1

S2

D2

S3

D3

S4

D4

Figure 1.

The ultralow capacitance and charge injection of this switch

makes it an ideal solution for data acquisition and sample-and-

hold applications, where low glitch and fast settling are required.

Fast switching speed coupled with high signal bandwidth makes

the part suitable for video signal switching.

iCMOS construction ensures ultralow power dissipation, making

the part ideally suited for portable and battery-powered instruments.

The ADG1212-EP contains four independent single-pole/

single-throw (SPST) switches. Each switch conducts equally

well in both directions when on and has an input signal range

that extends to the supplies. In the off condition, signal levels up

to the supplies are blocked.

Additional application and technical information can be found

in the ADG1212 data sheet.

GENERAL DESCRIPTION

The ADG1212-EP is a monolithic complementary metal-oxide

semiconductor (CMOS) device containing four independently

selectable switches designed on an iCMOS® (industrial CMOS)

process. iCMOS is a modular manufacturing process combining

high voltage CMOS and bipolar technologies. It enables the

development of a wide range of high performance analog ICs

capable of 33 V operation in a footprint that no previous generation

of high voltage parts has been able to achieve. Unlike analog

ICs using conventional CMOS processes, iCMOS components

can tolerate high supply voltages while providing increased

performance, dramatically lower power consumption, and

reduced package size.

PRODUCT HIGHLIGHTS

1.

Ultralow capacitance.

2.

<1 pC charge injection.

3.

4.

5.

Ultralow power dissipation: <0.03 μW.

6.

16-lead TSSOP package.