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IRF640 Datasheet(PDF) 5 Page - Fairchild Semiconductor

Part # IRF640
Description  18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

IRF640 Datasheet(HTML) 5 Page - Fairchild Semiconductor

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©2001 Fairchild Semiconductor Corporation
IRF640, RF1S640, RF1S640SM Rev. B
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
1.05
0.95
0.85
0.75
-60
-40
-20
0
20
40
60
TJ, JUNCTION TEMPERATURE (
oC)
100 120 140 160
1.15
80
ID = 250µA
3000
600
0
1
10
100
1800
VDS, DRAIN TO SOURCE VOLTAGE (V)
2400
1200
CISS
COSS
CRSS
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
VGS = 0V, f = 1MHz
25oC
ID, DRAIN CURRENT (A)
0
0
6
12
18
24
3
6
9
12
15
30
150oC
PULSE DURATION = 80
µs
DUTY CYCLE = 0.5% MAX
0
0.8
1.2
1.6
2.0
0.4
1
10
100
VSD, SOURCE TO DRAIN VOLTAGE (V)
1000
25oC
150oC
PULSE DURATION = 80
µs
DUTY CYCLE = 0.5% MAX
Qg, GATE CHARGE (nC)
0
015
30
45
60
4
8
12
16
20
75
ID = 28A
VDS = 100V
VDS = 160V
VDS = 40V
IRF640, RF1S640, RF1S640SM


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