IRF640B datasheet(4/10 Pages) FAIRCHILD

Part #	IRF640B

Description	200V N-Channel MOSFET

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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4 / 10 page

Rev. A, November 2001

10

0

10

1

10

2

10

-2

10

-1

10

0

10

1

10

2

100

µs

1 ms

DC

100 ms

10 ms

Operation in This Area

is Limited by R

DS(on)

※ Notes :

1. T

C = 25

o

C

2. T

J = 150

o

C

3. Single Pulse

V

DS, Drain-Source Voltage [V]

25

50

75

100

125

150

0

4

8

12

16

20

T

C

, Case Temperature [℃]

10

0

10

1

10

2

10

-1

10

0

10

1

10

2

DC

10 ms

1 ms

100

µs

Operation in This Area

is Limited by R

DS(on)

※ Notes :

1. T

C

= 25

o

C

2. T

J = 150

o

C

3. Single Pulse

V

DS, Drain-Source Voltage [V]

-100

-50

0

50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

※ Notes :

1. V

GS = 10 V

2. I

D = 9.0 A

T

J, Junction Temperature [

o

C]

-100

-50

0

50

100

150

200

0.8

0.9

1.0

1.1

1.2

※Notes:

1. V

GS = 0 V

2. I

D = 250

μ A

T

J, Junction Temperature [

o

C]

Typical Characteristics (Continued)

Figure 9-1. Maximum Safe Operating Area

for IRF640B

Figure 10. Maximum Drain Current

vs Case Temperature

Figure 7. Breakdown Voltage Variation

vs Temperature

Figure 8. On-Resistance Variation

vs Temperature

Figure 9-2. Maximum Safe Operating Area

for IRFS640B

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IRF640B Datasheet(PDF) 4 Page - Fairchild Semiconductor

IRF640B Datasheet(HTML) 4 Page - Fairchild Semiconductor

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