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IKW40N65F5 Datasheet(PDF) 5 Page - Infineon Technologies AG |
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IKW40N65F5 Datasheet(HTML) 5 Page - Infineon Technologies AG |
5 / 18 page 5 IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration Rev.1.1,2012-11-09 ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value min. typ. max. Parameter Symbol Conditions Unit StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 650 - - V Collector-emitter saturation voltage VCEsat VGE=15.0V,IC=40.0A Tvj=25°C Tvj=125°C Tvj=175°C - - - 1.60 1.80 1.90 2.10 - - V Diode forward voltage VF VGE=0V,IF=20.0A Tvj=25°C Tvj=125°C Tvj=175°C - - - 1.45 1.40 1.40 1.80 - - V Gate-emitter threshold voltage VGE(th) IC=0.40mA,VCE=VGE 3.2 4.0 4.8 V Zero gate voltage collector current ICES VCE=650V,VGE=0V Tvj=25°C Tvj=175°C - - - - 40.0 4000.0 µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=40.0A - 50.0 - S ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value min. typ. max. Parameter Symbol Conditions Unit DynamicCharacteristic Input capacitance Cies - 2500 - Output capacitance Coes - 50 - Reverse transfer capacitance Cres - 9 - VCE=25V,VGE=0V,f=1MHz pF Gate charge QG VCC=520V,IC=40.0A, VGE=15V - 95.0 - nC Internal emitter inductance measured 5mm (0.197 in.) from case LE PG-TO247-pinGCE PG-TO220-3 - 13.0 - nH SwitchingCharacteristic,InductiveLoad Value min. typ. max. Parameter Symbol Conditions Unit IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) - 19 - ns Rise time tr - 13 - ns Turn-off delay time td(off) - 160 - ns Fall time tf - 16 - ns Turn-on energy Eon - 0.36 - mJ Turn-off energy Eoff - 0.10 - mJ Total switching energy Ets - 0.46 - mJ Tvj=25°C, VCC=400V,IC=20.0A, VGE=0.0/15.0V, rG=15.0 Ω,Lσ=30nH, C σ=30pF L σ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. |
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