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PG-TO247-3 Datasheet(PDF) 11 Page - Infineon Technologies AG |
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PG-TO247-3 Datasheet(HTML) 11 Page - Infineon Technologies AG |
11 / 17 page 11 IKW50N65F5 Highspeedswitchingseriesfifthgeneration Rev.1.1,2012-11-09 Figure 13. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,Tvj=150°C,VCE=400V, VGE=15/0V,IC=25A,Dynamictestcircuitin Figure E) rG,GATERESISTOR[ Ω] 5 15 25 35 45 55 65 75 85 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 Eoff Eon Ets Figure 14. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=25A,rG=12 Ω,Dynamictestcircuitin Figure E) Tvj,JUNCTIONTEMPERATURE[°C] 25 50 75 100 125 150 175 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Eoff Eon Ets Figure 15. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=150°C,VGE=15/0V, IC=25A,rG=12 Ω,Dynamictestcircuitin Figure E) VCE,COLLECTOR-EMITTERVOLTAGE[V] 200 250 300 350 400 450 500 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Eoff Eon Ets Figure 16. Typicalgatecharge (IC=50A) QGE,GATECHARGE[nC] 0 20 40 60 80 100 120 0 2 4 6 8 10 12 14 16 130V 520V |
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