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Si5328-EVB Datasheet(PDF) 7 Page - Silicon Laboratories |
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Si5328-EVB Datasheet(HTML) 7 Page - Silicon Laboratories |
7 / 70 page Si5328 Rev. 1.0 7 Output Drive Current (CMOS driving into CKOVOL for output low or CKOVOH for output high. CKOUT+ and CKOUT– shorted externally) CKOIO ICMOS[1:0] =11 VDD =2.5 V —20 — mA ICMOS[1:0] =10 VDD =2.5 V —15 — mA ICMOS[1:0] =01 VDD =2.5 V —10 — mA ICMOS[1:0] =00 VDD =2.5 V —5 — mA ICMOS[1:0] = 11 VDD =3.3 V —32 — mA ICMOS[1:0] =10 VDD =3.3 V —24 — mA ICMOS[1:0] =01 VDD =3.3 V —16 — mA ICMOS[1:0] =00 VDD =3.3 V —8 — mA 2-Level LVCMOS Input Pins Input Voltage Low VIL VDD =2.25V — — 0.7 V VDD =2.97V — — 0.8 V Input Voltage High VIH VDD =2.25V 1.8 — — V VDD =3.63V 2.5 — — V Table 2. DC Characteristics (Continued) (VDD = 2.5 V ±10% or 3.3 V ±10%, TA = –40 to 85 °C) Parameter Symbol Test Condition Min Typ Max Unit Notes: 1. Current draw is independent of supply voltage 2. No under- or overshoot is allowed. 3. LVPECL, CML, LVDS and low-swing LVDS measured with Fo = 312.5 MHz. 4. This is the amount of leakage that the 3-Level inputs can tolerate from an external driver. See Si53xx Family Reference Manual for more details. |
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