ALD210800/ALD210800A

Advanced Linear Devices

2 of 12

ABSOLUTE MAXIMUM RATINGS

Notes:

1

Consists of junction leakage currents

OPERATING ELECTRICAL CHARACTERISTICS

ALD210800A

ALD210800

Parameter

Symbol

Min

Typ

Max

Min

Typ

Max

Unit

Test Conditions

Gate Threshold Voltage

VGS(th)

-0.01

0.00

0.01

-0.02

0.00

0.02

V

IDS =10µA, VDS = 0.1V

Offset Voltage

VOS

1

2

2

10

mV

VGS(th)M1-VGS(th)M2

or VGS(th)M3-VGS(th)M4

Offset Voltage Tempco

TCVOS

55

µV/°CVDS1 = VDS2

Gate Threshold Voltage Tempco

TCVGS(th)

-1.6

-1.6

mV/°CID = 10 µA, VDS = 0.1 V

0.0

0.0

ID = 380 uA, VDS = 0.1V

+1.6

+1.6

ID = 700 uA, VDS = 0.1 V

Drain Source On Current

IDS (ON)

70

70

mA

VGS = +4.0V, VDS = +5V

50

50

µAVGS = +0.1V, VDS = +0.1V

Forward Transconductance

GFS

24

24

mmho

VGS = +4.0V

VDS = +5.0V

Transconductance Mismatch

∆GFS

1.8

1.8

%

Output Conductance

GOS

1.6

1.6

mmho

VGS = +4.0V

VDS = +5.0V

Drain Source On Resistance

RDS (ON)

25

25

Ω

VGS = +5.0V

VDS = +0.1V

Drain Source On Resistance

RDS (ON)

10

10

KΩ

VDS = +0.1V, VGS = +0.0V

2.0

2.0

VDS = +0.1V, VGS = +0.1V

Drain Source On Resistance

∆RDS (ON)

1.8

1.8

%

VDS = +0.1V

Tolerance

VGS = +5.0V

Drain Source On Resistance

∆RDS (ON)

0.6

0.6

%

Mismatch

Drain Source Breakdown

BVDSX

10

10

V

V-= VGS = -1.0V

Voltage

IDS = 10µA

IDS (OFF)

10

400

10

400

pA

VGS = -1.0V, VDS =+5V

V- = -5V

44

nA

TA = 125°C

IGSS

5

200

5

200

pA

VGS = +5V, VDS = 0V

11

nA

TA =125°C

Input Capacitance

CISS

15

15

pF

Transfer Reverse Capacitance

CRSS

11

pF

Turn-on Delay Time

ton

10

10

ns

V+ = 5V, RL= 5KΩ

Turn-off Delay Time

toff

10

10

ns

V+ = 5V, RL= 5KΩ

Crosstalk

60

60

dB

f = 100KHz

Drain-Source voltage, VDS

10.6V

Gate-Source voltage, VGS

10.6V

Operating Current

80 mA

Power dissipation

500 mW

Operating temperature range SCL, PCL

0°C to +70°C

Storage temperature range

-65°C to +150°C

Lead temperature, 10 seconds

+260°C

CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.