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RJK03C5DPA-00-J5A Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # RJK03C5DPA-00-J5A
Description  Built in SBD N Channel Power MOS FET High Speed Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK03C5DPA-00-J5A Datasheet(HTML) 3 Page - Renesas Technology Corp

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RJK03C5DPA
Preliminary
R07DS0940EJ0400 Rev.4.00
Page 3 of 6
Mar 22, 2013
Main Characteristics
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Gate to Source Voltage
VGS (V)
Typical Transfer Characteristics
Drain Current
ID
(A)
Static Drain to Source On State Resistance
vs. Drain Current
100
80
60
40
20
0
2
468
10
100
80
60
40
20
0
12
3
4
5
Tc = 75
°C
25
°C
–25
°C
VDS = 5 V
Pulse Test
VGS = 2.4 V
10
3
1
30
300
1
10
100
1000
3
200
150
100
50
0
4
8
12
16
20
Pulse Test
ID = 20 A
10 A
100
30
VGS = 4.5 V
10 V
2.6 V
3.0 V
10 V
4.5 V
Pulse Test
5 A
Case Temperature
Tc (°C)
Power vs. Temperature Derating
80
60
40
20
0
50
100
150
200
Drain to Source Voltage
VDS (V)
Maximum Safe Operation Area
0.1
1
10
100
10
100
1000
1
0.1
PW = 10 ms
Operation in
this area is
limited by RDS(on)
Tc = 25
°C
1 shot Pulse
Pulse Test
2.8 V
1 ms
10
μs
100
μs


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