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IRF7501PBF Datasheet(PDF) 2 Page - International Rectifier

Part # IRF7501PBF
Description  Generation V Technology Ulrtra Low On-Resistance
Download  9 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF7501PBF Datasheet(HTML) 2 Page - International Rectifier

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IRF7501PbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.2
V
TJ = 25°C, IS = 1.7A, VGS = 0V
ƒ
trr
Reverse Recovery Time
–––
39
59
ns
TJ = 25°C, IF = 1.7A
Qrr
Reverse Recovery Charge
–––
37
56
nC
di/dt = 100A/μs
ƒ
Source-Drain Ratings and Characteristics
–––
–––
––– –––
19
1.25
A
S
D
G
„ Surface mounted on FR-4 board, t ≤10sec
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 10 )
‚ ISD ≤ 1.7A, di/dt ≤ 66A/μs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
ƒ Pulse width ≤ 300μs; duty cycle ≤ 2%
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
20
––– –––
V
VGS = 0V, ID = 250μA
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
––– 0.041 –––
V/°C Reference to 25°C, ID = 1mA
––– 0.085 0.135
VGS = 4.5V, ID = 1.7A
„
––– 0.120 0.20
VGS = 2.7V, ID = 0.85A
„
VGS(th)
Gate Threshold Voltage
0.70 ––– –––
V
VDS = VGS, ID = 250μA
gfs
Forward Transconductance
2.6
––– –––
S
VDS = 10V, ID = 0.85A
–––
–––
1.0
VDS = 16V, VGS = 0V
–––
–––
25
VDS = 16V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
––– 100
VGS = 12V
Gate-to-Source Reverse Leakage
–––
––– -100
VGS = -12V
Qg
Total Gate Charge
–––
5.3
8.0
ID = 1.7A
Qgs
Gate-to-Source Charge
––– 0.84 1.3
nC
VDS = 16V
Qgd
Gate-to-Drain ("Miller") Charge
–––
2.2
3.3
VGS = 4.5V, See Fig. 9
„
td(on)
Turn-On Delay Time
–––
5.7
–––
VDD = 10V
tr
Rise Time
–––
24
–––
ID = 1.7A
td(off)
Turn-Off Delay Time
–––
15
–––
RG = 6.0
Ω
tf
Fall Time
–––
16
–––
RD = 5.7
Ω „
Ciss
Input Capacitance
–––
260 –––
VGS = 0V
Coss
Output Capacitance
–––
130 –––
pF
VDS = 15V
Crss
Reverse Transfer Capacitance
–––
61
–––
ƒ = 1.0MHz, See Fig. 8
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
μA
Ω
RDS(on)
Static Drain-to-Source On-Resistance
IDSS
Drain-to-Source Leakage Current
nA
ns


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