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IRF7501PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRF7501PBF Datasheet(HTML) 2 Page - International Rectifier |
2 / 9 page IRF7501PbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 1.7A, VGS = 0V trr Reverse Recovery Time ––– 39 59 ns TJ = 25°C, IF = 1.7A Qrr Reverse Recovery Charge ––– 37 56 nC di/dt = 100A/μs Source-Drain Ratings and Characteristics ––– ––– ––– ––– 19 1.25 A S D G Surface mounted on FR-4 board, t ≤10sec Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 10 ) ISD ≤ 1.7A, di/dt ≤ 66A/μs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Notes: Pulse width ≤ 300μs; duty cycle ≤ 2% Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250μA ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.041 ––– V/°C Reference to 25°C, ID = 1mA ––– 0.085 0.135 VGS = 4.5V, ID = 1.7A ––– 0.120 0.20 VGS = 2.7V, ID = 0.85A VGS(th) Gate Threshold Voltage 0.70 ––– ––– V VDS = VGS, ID = 250μA gfs Forward Transconductance 2.6 ––– ––– S VDS = 10V, ID = 0.85A ––– ––– 1.0 VDS = 16V, VGS = 0V ––– ––– 25 VDS = 16V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 12V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -12V Qg Total Gate Charge ––– 5.3 8.0 ID = 1.7A Qgs Gate-to-Source Charge ––– 0.84 1.3 nC VDS = 16V Qgd Gate-to-Drain ("Miller") Charge ––– 2.2 3.3 VGS = 4.5V, See Fig. 9 td(on) Turn-On Delay Time ––– 5.7 ––– VDD = 10V tr Rise Time ––– 24 ––– ID = 1.7A td(off) Turn-Off Delay Time ––– 15 ––– RG = 6.0 Ω tf Fall Time ––– 16 ––– RD = 5.7 Ω Ciss Input Capacitance ––– 260 ––– VGS = 0V Coss Output Capacitance ––– 130 ––– pF VDS = 15V Crss Reverse Transfer Capacitance ––– 61 ––– ƒ = 1.0MHz, See Fig. 8 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS μA Ω RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current nA ns |
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