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CSD18563Q5A Datasheet(PDF) 2 Page - Texas Instruments |
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CSD18563Q5A Datasheet(HTML) 2 Page - Texas Instruments |
2 / 10 page CSD18563Q5A SLPS444 – JULY 2013 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Static Characteristics BVDSS Drain to Source Voltage VGS = 0V, ID = 250μA 60 V IDSS Drain to Source Leakage Current VGS = 0V, VDS = 48V 1 μA IGSS Gate to Source Leakage Current VDS = 0V, VGS = 20V 100 nA VGS(th) Gate to Source Threshold Voltage VDS = VGS, ID = 250μA 1.7 2.0 2.4 V VGS = 4.5V, ID = 18A 8.6 10.8 m Ω RDS(on) Drain to Source On Resistance VGS = 10V, ID = 18A 5.7 6.8 m Ω gfs Transconductance VDS = 30V, ID = 18A 60 S Dynamic Characteristics Ciss Input Capacitance 1150 1500 pF Coss Output Capacitance VGS = 0V, VDS = 30V, f = 1MHz 280 364 pF Crss Reverse Transfer Capacitance 3.9 5.1 pF RG Series Gate Resistance 1.5 3.0 Ω Qg Gate Charge Total (4.5V) 7.3 9.5 nC Qg Gate Charge Total (10V) 15 20 Qgd Gate Charge Gate to Drain VDS = 30V, ID = 18A 2.9 nC Qgs Gate Charge Gate to Source 3.3 nC Qg(th) Gate Charge at Vth 2.3 nC Qoss Output Charge VDS = 30V, VGS = 0V 36 nC td(on) Turn On Delay Time 3.2 ns tr Rise Time 6.3 ns VDS = 30V, VGS = 10V, IDS = 18A, RG = 0Ω td(off) Turn Off Delay Time 11.4 ns tf Fall Time 1.7 ns Diode Characteristics VSD Diode Forward Voltage ISD = 18A, VGS = 0V 0.8 1 V Qrr Reverse Recovery Charge 63 nC VDS= 30V, IF = 18A, di/dt = 300A/μs trr Reverse Recovery Time 49 ns THERMAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER MIN TYP MAX UNIT RθJC Thermal Resistance Junction to Case(1) 1.3 °C/W RθJA Thermal Resistance Junction to Ambient(1)(2) 50 °C/W (1) RθJC is determined with the device mounted on a 1-inch 2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm × 3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design. (2) Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu. 2 Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links: CSD18563Q5A |
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