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BLF8G20LS-400PGV Datasheet(PDF) 10 Page - NXP Semiconductors |
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BLF8G20LS-400PGV Datasheet(HTML) 10 Page - NXP Semiconductors |
10 / 20 page BLF8G20LS-400PV_LS-400PGV All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 1 — 25 June 2013 10 of 20 NXP Semiconductors BLF8G20LS-400P(G)V Power LDMOS transistor 7.5.4 1-Carrier W-CDMA VDS =28V; IDq = 3400 mA. (1) f = 1805 MHz (2) f = 1840 MHz (3) f = 1880 MHz Fig 14. Input return loss as a function of average output power; typical values VDS =28V; IDq = 3400 mA. (1) f = 1805 MHz (2) f = 1840 MHz (3) f = 1880 MHz VDS =28V; IDq = 3400 mA. (1) f = 1805 MHz (2) f = 1840 MHz (3) f = 1880 MHz Fig 15. Power gain as a function of average output power; typical values Fig 16. Drain efficiency as a function of average output power; typical values |
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