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2N2907 Datasheet(PDF) 3 Page - Comset Semiconductor |
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2N2907 Datasheet(HTML) 3 Page - Comset Semiconductor |
3 / 3 page PNP 2N2907 – 2N2907A 16/10/2012 COMSET SEMICONDUCTORS 3/3 Symbol Ratings Test Condition(s) Min Typ Max Unit fT Transition frequency IC=-50 mA VCE=-20 V f= 100MHz 2N2907A 200 - - MHz 2N2907 200 - - td Delay time IC=-150 mA IB =-15 mA -VCC=-30 V 2N2907A - - 10 ns tr Rise time 2N2907 - - 40 CC Collector capacitance IE= Ie = 0 VCB=-10 V f = 100kHz 2N2907A - - 8 pF 2N2907 CE Emitter capacitance IC= Ic = 0 VEB=-0.5 V f = 100kHz 2N2907A - - 30 pF 2N2907 (*) Pulse conditions : tp < 300 µs, δ =2% MECHANICAL DATA CASE TO-18 Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com info@comsetsemi.com use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular DIMENSIONS (mm) min max A 12.7 - B - 0.49 C 0.9 - D - 5.3 E - 4.9 F - 5.8 G 2.54 - H - 1.2 I - 1.16 L 45° - Pin 1 : emitter Pin 2 : base Pin 3 : Collector Case : Collector |
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