2N3583 datasheet(2/3 Pages) COMSET

Part #	2N3583

Description	NPN SILICON POWER TRANSISTORS.

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Manufacturer	COMSET [Comset Semiconductor]

Direct Link	http://comset.halfin.com

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NPN 2N3583 – 2N3584 – 2N3585

17/10/2012

COMSET SEMICONDUCTORS

2 | 3

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

ICEO

Collector-Emitter cut-

off current

IB = 0 ; VCE = 150 V

2N3583

-

10

mA

2N3584

-

5

2N3585

-

5

ICEX

Collector-Emitter

cut-off current

VBE = -1.5V ; VCE = 225 V

2N3583

1

VBE = -1.5V ; VCE = 340 V

2N3584

VBE = -1.5V ; VCE = 450 V

2N3585

VBE = -1.5V ; VCE = 225 V

Tj= 150°C

2N3583

-

3

VBE = -1.5V ; VCE = 300 V

Tj= 150°C

2N3584

2N3585

IEBO

Emitter cut-offcurrent

IC = 0 ; VEB = 6 V

2N3583

-

5

2N3584

-

0.5

2N3585

-

0.5

VCEO(SUS)

Collector-Emitter

sustaning Voltage (*)

IB = 0 ; IC = 200 mA

2N3583

175

-

V

2N3584

250

-

2N3585

300

-

VCE(SAT)

Collector-Emitter

saturation Voltage (*)

IC = 1 A ; IB = 125 mA

2N3583

-

5

V

2N3584

-

0.75

2N3585

-

0.75

VBE(SAT)

Base-Emitter

saturation Voltage (*)

IC = 1 A ; IB = 100 mA

2N3583

-

1.4

2N3584

2N3585

hFE

DC Current Gain (*)

VCE = 10 V ; IC = 500 mA

2N3583

40

-

200

VCE = 10 V ; IC = 1 A

2N3583

10

-

2N3584

25

-

100

2N3585

25

-

100

VCE = 2 V ; IC = 1 A

2N3584

8

-

80

2N3585

8

-

80

IS/B

Second Breakdown

Collector current

VCE = 100 V ; t = 1 s

2N3583

350

-

mA

2N3584

2N3585

fT

Transition frequency

VCE = 10 V ; IC = 200 mA

f = 5 MHz

2N3583

10

-

MHz

2N3584

2N3585

td+tr

Turn-on-time

IC = 1 A ; IB = 100 mA

2N3584

-

3

µs

2N3585

tf

Fall time

IC = 1 A ; IB = 100 mA

2N3584

-

3

2N3585

ts

Carrier storage time

IC = 1 A ; IB = 100 mA

2N3584

-

4

2N3585

(*) Measured under pulse conditions :tP <300µs, δ <2%.

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