180T2_12 datasheet(2/3 Pages) COMSET | NPN SILICON TRANSISTORS, DIFFUSED MESA

Part No.	180T2

Description	NPN SILICON TRANSISTORS, DIFFUSED MESA

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Manufacturer	COMSET [Comset Semiconductor]

Direct Link	http://comset.halfin.com

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2 / 3 page

BDY23 – 180T2

BDY24 – 181T2

BDY25 – 182T2

31/10/2012

COMSET SEMICONDUCTORS

2 | 3

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

VCEO(BR)

Collector-Emitter

Breakdown Voltage (*)

IC=50 mA

IB=0

BDY23, 180T2

60

-

V

BDY24, 181T2

80

-

BDY25, 182T2

140

-

ICEO

Collector-Emitter Cutoff

Current

VCE=60 V

BDY23

-

1.0

mA

VCE=90 V

BDY24

-

VCE=140 V

BDY25

-

IEBO

Emitter-Base Cutoff

Current

VEB=10 V

BDY23, 180T2

-

1.0

mA

BDY24, 181T2

BDY25, 182T2

ICES

Collector-Emitter Cutoff

Current

VCE=60 V

VBE=0 V

BDY23, 180T2

-

0.5

mA

VCE=100 V

VBE=0 V

BDY24, 181T2

-

1.0

VCE=180 V

VBE=0 V

BDY25, 182T2

-

1.0

VCE(SAT)

Collector-Emitter

saturation Voltage (*)

IC=2.0 A,

IB=0.25 A

BDY23, 180T2

-

1

V

BDY24, 181T2

-

0.6

BDY25, 182T2

-

0.6

V(BR)CBO

Collector-Base

Breakdown Voltage (*)

IC=3 mA

BDY23, 180T2

60

-

V

BDY24, 181T2

100

-

BDY25, 182T2

200

-

VBE(SAT)

Base-Emitter Voltage (*)

IC=2.0 A,

IB=0.25 A

BDY23, 180T2

-

2.0

V

BDY24, 181T2

-

1.2

BDY25, 182T2

-

1.2

h21E

Static Forward Current

transfer ratio (*)

VCE=4 V

IC=1 A

A

-

55

-

B

-

65

-

C

-

90

-

VCE=4 V

IC=2 A

A

15

20

45

B

30

45

90

C

75

82

100

fT

Transition Frequency

VCE=15 V, IC=0.5 A, f=10 MHz

10

-

MHz

td + tr

Turn-on time

IC=5 A, IB=1 A

-

0.3

0.5

µs

ts + tf

Turn-off time

IC=5 A, IB1=1 A, IB2=-0.5 A

-

0.3

0.5

µs

(*) Pulse Width

≈ 300 µs, Duty Cycle ∠ 2.0%

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