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KA5M0765RQCTU Datasheet(PDF) 6 Page - Fairchild Semiconductor |
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KA5M0765RQCTU Datasheet(HTML) 6 Page - Fairchild Semiconductor |
6 / 12 page KA5M0765RQC 6 Typical Performance Characteristics (SFET part) (Continued) -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 Note: ※ 1. V GS =0 V 2. I D =250 µA T J, Junction Temperature [ oC] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Note: ※ 1. V GS = 10 V 2. I D = 6.0 A T J, Junction Temperature [ oC] Figure 7. Breakdown Voltage vs. Temperature Figure 8. On-Resistance vs. Temperature 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 DC 10ms 1ms 100 µs Operation in This Area is Limited byR DS(on) Notes : ※ 1. T C = 25 oC 2. T J = 150 oC 3. SinglePulse V DS, Drain-Source Voltage [V] 25 50 75 100 125 150 0 2 4 6 8 T C, Case Temperature [ ] ℃ Figure 9. Max. Safe Operating Area Figure 10. Max. Drain Current vs. Case Temperature 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 Notes : ※ 1. Z θ JC(t) = 0.9 /W Max. ℃ 2. Duty Factor, D=t 1/t2 3. T JM - TC = PDM * Zθ JC(t) single pulse D=0.5 0.02 0.2 0.05 0.1 0.01 t 1, Square Wave Pulse Duration [sec] Figure 11. Thermal Response |
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