PARAMETER

MIN TYP MAX UNITS

TEST CONDITION

Input

Forward Voltage (V

1.2

1.65

V

I

Reverse Current (I

μAV

Output

Collector-emitter Breakdown (BV

IS5, ISD5, ISQ5

70

V

I

IS1, ISD1, ISQ1, IS74, ISD74, ISQ74

50

V

( Note 2)

Emitter-collector Breakdown (BV

V

I

Collector-emitter Dark Current (I

nA

V

Coupled

Current Transfer Ratio (CTR) (Note 2)

IS1, ISD1, ISQ1

20

300

%

10mA I

IS5, ISD5, ISQ5

50

400

%

10mA I

IS74, ISD74, ISQ74

12.5

%

16mA I

Saturated Current Transfer Ratio

IS1, ISD1, ISQ1

75

%

10mA I

IS5, ISD5, ISQ5

100

%

10mA I

IS74, ISD74, ISQ74

12.5

%

16mA I

Input to Output Isolation Voltage V

ISO

5300

V

RMS

See note 1

Input to Output Isolation Voltage V

ISO

7500

V

PK

See note 1

Input-output Isolation Resistance R

ISO

Ω

V

Output Rise Time

tr

2.6

μsI

Output Fall Time

tf

2.2

μsV

Note 1

Measured with input leads shorted together and output leads shorted together.

Note 2

Special Selections are available on request. Please consult the factory.

26/11/08

ABSOLUTEMAXIMUMRATINGS

(25°C unless otherwise specified)

Storage Temperature

-40°C to + 125°C

Operating Temperature

-25°C to + 100°C

Lead Soldering Temperature

(1/16 inch (1.6mm) from case for 10 secs) 260°C

INPUTDIODE

Forward Current

50mA

Reverse Voltage

6V

Power Dissipation

70mW

OUTPUTTRANSISTOR

Collector-emitter Voltage BV

CEO

IS5, ISD5, ISQ5

70V

IS1,ISD1,ISQ1,IS74,ISD74,ISQ74

50V

Emitter-collector Voltage BV

ECO

6V

Collector Current

50mA

Power Dissipation

150mW

POWERDISSIPATION

Total Power Dissipation

170mW

(derate linearly 2.67mW/°C above 25°C)

ELECTRICAL CHARACTERISTICS ( T

DB92163