RJK03R4DPA datasheet(3/11 Pages) RENESAS

Part #	RJK03R4DPA

Description	Built in SBD Dual N-channel Power MOS FET High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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3 / 11 page

RJK03R4DPA

Preliminary

R07DS0888EJ0110 Rev.1.10

Page 3 of 10

Oct 29, 2012

• MOS2

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

V(BR)DSS

30

—

V

ID = 10 mA, VGS = 0

Gate to source leak current

IGSS

—

±0.5

A

VGS = ±12 V, VDS = 0

Zero gate voltage drain current

IDSS

—

1

mA

VDS = 24 V, VGS = 0

Gate to source cutoff voltage

VGS(off)

1.2

—

2.5

V

VDS = 10 V, I D =1 mA

RDS(on)

—

1.9

2.3

m



ID =25 A, VGS = 8 V

Note4

Static drain to source on state

resistance

RDS(on)

—

2.1

2.8

m



ID = 25 A, VGS = 4.5 V

Note4

Forward transfer admittance

|yfs|

—

133

—

S

ID = 25 A, VDS = 5 V

Note4

Input capacitance

Ciss

—

6980

9770

pF

Output capacitance

Coss

—

740

—

pF

Reverse transfer capacitance

Crss

—

450

—

pF

VDS = 10 V

VGS = 0

f = 1MHz

Gate Resistance

Rg

—

1.0

2.2



Total gate charge

Qg

—

45

—

nC

Gate to source charge

Qgs

—

19

—

nC

Gate to drain charge

Qgd

—

12

—

nC

VDD = 10 V

VGS = 4.5 V

ID = 50 A

Turn-on delay time

td(on)

—

12.4

—

ns

Rise time

tr

—

6.8

—

ns

Turn-off delay time

td(off)

—

87.2

—

ns

Fall time

tf

—

24

—

ns

VGS = 8 V, ID = 25 A

VDD  10 V

RL = 0.4 

Rg = 4.7 

Schottky Barrier diode forward voltage

VF

—

0.40

—

V

IF = 2 A, VGS = 0

Note4

Body–drain diode reverse

recovery time

trr

—

10.0

—

ns

IF = 50 A, VGS = 0

diF/ dt = 500 A/s

Notes: 4. Pulse

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