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BDX33A Datasheet(PDF) 3 Page - Comset Semiconductor |
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BDX33A Datasheet(HTML) 3 Page - Comset Semiconductor |
3 / 4 page NPN BDX33 – BDX33A – BDX33B – BDX33C 23/10/2012 COMSET SEMICONDUCTORS 3/4 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit ICBO Collector-Base Cutoff Current VCBO=45 V TC=100°C BDX33 - - 5 mA VCBO=60 V TC=100°C BDX33A - - VCBO=80 V TC=100°C BDX33B - - VCBO=100 V TC=100°C BDX33C - - VCE(SAT) Collector-Emitter saturation Voltage (*) IC=4.0 A, IB=8.0 mA BDX33 - - 2.5 V BDX33A BDX33B BDX33C IC=3.0 A, IB=6.0 mA BDX33 - - 2.5 BDX33A BDX33B BDX33C VF Forward Voltage (pulse method) IF=8 A BDX33 - - 4.0 V BDX33A BDX33B BDX33C VBE Base-Emitter Voltage (*) IC=4.0 A, VCE=3.0V BDX33 - - 2.5 V BDX33A IC=3.0 A, VCE=3.0V BDX33B - - 2.5 BDX33C hFE DC Current Gain (*) VCE=3.0 V, IC=4.0 A BDX33 750 - - - BDX33A VCE=3.0 V, IC=3.0 A BDX33B 750 - - BDX33C (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% |
Similar Part No. - BDX33A |
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Similar Description - BDX33A |
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