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BDY58 Datasheet(PDF) 1 Page - Comset Semiconductor

Part No. BDY58
Description  SILICON TRANSISTORS, DIFFUSED MESA
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Manufacturer  COMSET [Comset Semiconductor]
Direct Link  http://comset.halfin.com
Logo COMSET - Comset Semiconductor

BDY58 Datasheet(HTML) 1 Page - Comset Semiconductor

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NPN BDY57 – BDY58
09/11/2012
COMSET SEMICONDUCTORS
1 | 3
SILICON TRANSISTORS, DIFFUSED MESA
The BDY57 and BDY58 are mounted in TO-3 metal package.
LF Large Signal Power Amplification
High Current Fast Switching.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
VCEO
Collector-Emitter Voltage
BDY57
80
V
BDY58
125
VCBO
Collector-Base Voltage
BDY57
120
V
BDY58
160
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current
25
A
IB
Base Current
6
A
PTOT
Power Dissipation
@ TC = 25°
175
W
TJ TS
Junction Temperature Storage Temperature
-65 to +200
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
RthJ-C
Thermal Resistance, Junction to Case
1
°C/W


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