RJK0629DPK datasheet(1/7 Pages) RENESAS

Part #	RJK0629DPK

Description	60V, 85A, 4.5m max.N Channel Power MOS FET High-Speed Switching Use

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Manufacturer	RENESAS [Renesas Technology Corp]

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R07DS1061EJ0200 Rev.2.00

Page 1 of 6

Apr 09, 2013

Preliminary Datasheet

RJK0629DPK

60V, 85A, 4.5m

 max.

N Channel Power MOS FET

High-Speed Switching Use

Features

 V

DSS: 60 V

 R

DS(on): 4.5 m (Max)

 I

D: 100 A

Outline

RENESAS Package code: PRSS0004ZE-A

(Package name: TO-3P)

1. Gate

2. Drain (Flange)

3. Source

1

2

3

D

G

1

3

2

S

Absolute Maximum Ratings

(Ta = 25

C)

Item

Symbol

Value

Unit

Drain to source voltage

VDSS

60

V

Gate to source voltage

VGSS

20

V

Drain current

ID

85

A

Drain peak current

ID (pulse)

Note1

340

A

Body-drain diode reverse drain current

IDR

85

A

Body-drain diode reverse drain peak current

IDR (pulse)

Note1

340

A

Avalanche current

IAP

Note2

55

A

Channel dissipation

Pch

Note3

100

W

Channel to case thermal impedance

ch-c

1.25

C/W

Channel temperature

Tch

150

C

Storage temperature

Tstg

–55 to +150

C

Notes: 1. Tch

 150C

2. STch = 25

C, Tch  150C, L = 100 H

3. Value at Tc = 25

C

R07DS1061EJ0200

(Previous: REJ03G1875-0100)

Rev.2.00

Apr 09, 2013

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