TIC216A, TIC216B, TIC216D, TIC216M, TIC216N, TIC216S

30/10/2012

COMSET SEMICONDUCTORS

2 | 3

SEMICONDUCTORS

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ Max Unit

Repetitive peak

off-state current

-

-

±2

mA

Gate trigger

current

-

-

5

mA

-

-

-5

-

-

-5

-

-

10

Gate trigger

voltage

-

-

2.2

V

-

-

-2.2

-

-

-2.2

-

-

3

Holding current

-

-

30

mA

-

-

-30

Latching current

-

50

-

mA

-

-20

-

Peak on-state

voltage

-

-

±1.7

V

dv/dt

Critical rate of

rise of off-state

voltage

-

±50

-

V/µs

Critical rise of

communication

voltage

±5

-

-

† All voltages are whit respect to Main Terminal 1.

Notes:

1.

These values apply bidirectionally for any value of resistance between the gate and Main Terminal

1.

2.

This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly

to 110°C case temperature at the rate of 150 mA/°C.

3.

This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated

value of on-state current. Surge may be repeated after the device has returned to original thermal

equilibrium. During the surge, gate control may be lost.

4.

This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated

value of on-state current. Surge may be repeated after the device has returned to original thermal

equilibrium. During the surge, gate control may be lost.

5.

This value applies for a maximum averaging time of 20 ms.

6.

sensing

contacts, separate from the courrent-carrying contacts are located within 3.2mm (1/8

inch) from de device body.

7. The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator