TIC126S datasheet(1/4 Pages) COMSET

Part #	TIC126S

Description	P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS

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Manufacturer	COMSET [Comset Semiconductor]

Direct Link	http://comset.halfin.com

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TIC126A, TIC126B, TIC126C, TIC126D, TIC126E, TIC126M,

TIC126N, TIC126S

30/10/2012

COMSET SEMICONDUCTORS

1 | 4

SEMICONDUCTORS

P-N-P-N SILICON REVERSE-BLOCKING TRIODE

THYRISTORS

• 12 A Continuous On-State Current

• 100 A Surge-Current

• Glass Passivated Wafer

• 100 V to 800 V Off-State Voltage

• Max IGT of 20 mA

• Compliance to ROHS

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

A

B

C

D

E

M

S

N

VDRM

Repetitive peak off-state voltage

(see Note1)

100 200 300 400 500 600 700 800

V

VRRM

Repetitive peak reverse voltage

100 200 300 400 500 600 700 800

V

IT(RMS)

Continuous on-state current at

(or below) 70°C case temperature

(see note2)

12

A

IT(AV)

Average on-state current

(180° conduction angle) at(or below)

70°C case temperature (see Note3)

7.5

A

ITM

Surge on-state current (see Note4)

100

A

IGM

Peak positive gate current

(pulse width ≤300 µs)

3

A

PGM

Peak power dissipation

(pulse width ≤300 µs)

5

W

PG(AV)

Average gate power dissipation

(see Note5)

1

W

TC

Operating case temperature range

-40 to +110

°C

Tstg

Storage temperature range

-40 to +125

°C

TL

Lead temperature 1.6 mm from case

for 10 seconds

230

°C

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