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ISC3242AS1 Datasheet(PDF) 1 Page - Isahaya Electronics Corporation |
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ISC3242AS1 Datasheet(HTML) 1 Page - Isahaya Electronics Corporation |
1 / 4 page 〈SMALL-SIGNAL TRANSISTOR〉 ISC3242AS1 FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE ISAHAYA ELECTRONICS CORPORATION DESCRIPTION ISC3242AS1 is a silicon NPN epitaxial type transistor designed for small type motor drive, solenoid drive and power supply application. Complementary with 2SA1998. FEATURE ●High collector current. I C=2A ●Low V CE(sat). V CE(sat)=0.17V typ (@IC=1A) ●High hFE hFE=150 to 800 ●High collector dissipation. P C=600mW APPLICATION Small type motor drive, power supply for VCR, deck, player. . ※1:( ) shows value of item G . ※2:It shows hFE classification in right table. OUTLINE DRAWING Unit:mm MAXIMUM RATINGS(Ta=25℃) Symbol Parameter Ratings Unit VCBO Collector to Base voltage 20 V VEBO Emitter to Base voltage 6 V VCEO Collector to Emitter voltage 20(16)※1 V I C Collector current 2 A I CM Peak collector current 3 A P c Collector dissipation 600 mW T j Junction temperature +150 ℃ T stg Storage temperature -55~+150 ℃ Item E F G hFE item 150~300 250~500 400~800 ELECTRICAL CHARACTERISTICS(Ta=25℃) Parameter Parameter Test conditions Limits Unit Min Typ Max V(BR)CBO C to B break down voltage I C= 10μA , IE =0mA 20 - - V V(BR)EBO E to B break down voltage I E= 10μA , IC =0mA 6 - - V V(BR)CEO C to E break down voltage I C=2mA , RBE= ∞ 20(16) ※1 - - V ICBO Collector cut off current V CB= 16V , I E= 0mA - - 0.2 μA IEBO Emitter cut off current V EB= 4V , I C= 0mA - - 0.2 μA hFE※2 DC forward current gain V CE = 4V , IC=100mA 150 - 800 - VCE(sat) C to E Saturation Voltage I C= 1A , I B=50mA - 0.17 0.3 V fT Gain band width product V CE=2V , I E= -10mA - 80 - MHz Cob Collector output capacitance V CB= 10V , I E= 0mA,f=1MHz - 28 - pF JEITA: JEDEC: TERMINAL CONNECTER ①:EMITTER ②:COLLECTOR ③:BASE 4.0 2.5 2.5 0.45 0.1 ① ② ③ |
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