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ISC3244AS1 Datasheet(PDF) 1 Page - Isahaya Electronics Corporation |
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ISC3244AS1 Datasheet(HTML) 1 Page - Isahaya Electronics Corporation |
1 / 4 page 〈SMALL-SIGNAL TRANSISTOR〉 ISC3244AS1 FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE ISAHAYA ELECTRONICS CORPORATION DESCRIPTION ISC3244AS1 is a silicon NPN epitaxial type transistor designed with high collector dissipation, high voltage. Complementary with ISA1284AS1. FEATURE ●High voltage. V CEo=100V ●High peak collector current. I CM=800mA ●High gain band width product. fT=130MHz (typ) ●High collector dissipation. P C=600mW APPLICATION Drive for 20 to 40W amplifier, relay drive, power supply application. . ※) It shows hFE classification in right table. OUTLINE DRAWING Unit:mm MAXIMUM RATINGS(Ta=25℃) Symbol Parameter Ratings Unit VCBO Collector to Base voltage 100 V VEBO Emitter to Base voltage 5 V VCEO Collector to Emitter voltage 100 V I C Collector current 500 mA I CM Peak collector current 800 mA P c Collector dissipation 600 mW T j Junction temperature +150 ℃ T stg Storage temperature -55~+150 ℃ Item C D E hFE item 55~110 90~180 150~300 ELECTRICAL CHARACTERISTICS(Ta=25℃) Parameter Parameter Test conditions Limits Unit Min Typ Max V(BR)CBO C to B break down voltage I C= 10μA , IE =0mA 100 - - V V(BR)EBO E to B break down voltage I E= 10μA , IC =0mA 5 - - V V(BR)CEO C to E break down voltage I C= 1mA , RBE= ∞ 100 - - V ICBO Collector cut off current V CB= 50V , I E= 0mA - - 0.5 μA IEBO Emitter cut off current V EB=2V , I C= 0mA - - 0.5 μA hFE※ DC forward current gain V CE = 10V , IC= 10mA 55 - 300 - VCE(sat) C to E Saturation Voltage I C=150mA , I B= 15mA - 0.15 0.5 V fT Gain band width product V CE=10V , I E= -10mA - 130 - MHz Cob Collector output capacitance V CB= 10V , IE= 0mA,f=1MHz - 6.5 - pF JEITA: JEDEC: TERMINAL CONNECTER ①:EMITTER ②:COLLECTOR ③:BASE 4.0 2.5 2.5 0.45 0.1 ① ② ③ |
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