RJK1008DPP-E0-T2 datasheet(4/7 Pages) RENESAS

Part #	RJK1008DPP-E0-T2

Description	N-Channel Power MOSFET High-Speed Switching Use

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Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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4 / 7 page

RJK1008DPP-E0

Preliminary

R07DS0798EJ0100 Rev.1.00

Page 4 of 6

Jun 08, 2012

20

16

12

8

4

−25

0

25

50

75

100 125 150

0

0.1

100

1000

10

100

1

0.1

110

Case Temperature Tc (

°C)

Drain to Source on State Resistance

vs. Temperature

Drain Current

ID (A)

Forward Transfer Admittance vs.

Drain Current

0.1

1

10

100

10

0.1

10

1

100

10000

1000

160

0

16

120

12

80

8

40

4

40

80

120

160

200

0

1000

10

100

0.1

1

10

100

10

VGS = 0

f = 1 MHz

Ciss

Coss

Crss

Reverse Drain Current IDR (A)

Body-Drain Diode Reverse

Recovery Time

Drain to Source Voltage VDS (V)

Typical Capacitance vs.

Drain to Source Voltage

Gate Charge Qg (nC)

Dynamic Input Characteristics

Drain Current ID (A)

Switching Characteristics

di / dt =

−100 A / μs

VGS = 0, Ta = 25°C

td(on)

td(off)

VGS = 10 V, VDD = 50 V

PW = 5

μs, duty ≤ 1 %

RG = 25 Ω

tr

tf

VGS = 10 V

Pulse Test

10 A

40 A

ID = 80 A

Tc =

−25°C

25

°C

75

°C

VDS = 10 V

Pulse Test

ID = 80 A

VDS

VGS

VDD = 80 V

50 V

25 V

VDD = 25 V

50 V

80 V

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RJK1008DPP-E0-T2 Datasheet(PDF) 4 Page - Renesas Technology Corp

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