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TIC226C Datasheet(PDF) 2 Page - Comset Semiconductor |
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TIC226C Datasheet(HTML) 2 Page - Comset Semiconductor |
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2 / 4 page  TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M, TIC226N, TIC226S 30/10/2012 COMSET SEMICONDUCTORS 2 | 4 SEMICONDUCTORS THERMAL CHARACTERISTICS Symbol Ratings Value Unit R∂JC Junction to case thermal resistance ≤ 1.8 °C/W R∂JA Junction to free air thermal resistance ≤ 62.5 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit IDRM Repetitive peak off-state current VD = Rated VDRM, , IG = 0 TC = 110°C - - ±2 mA IGT Gate trigger current Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs - 2 50 mA Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs - -12 -50 Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs - -9 -50 Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs - 20 - VGT Gate trigger voltage Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs - 0.7 2 V Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs - -0.8 -2 Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs - -0.8 -2 Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs - 0.9 2 IH Holding current Vsupply = +12 V†, IG = 0 initiating ITM = 100 mA - 5 30 mA Vsupply = -12 V†, IG = 0 initiating ITM = -100 mA - -9 -30 IL Latching current Vsupply = +12 V† (seeNote7) - - 50 mA Vsupply = -12 V† (seeNote7) - - -50 VTM Peak on-state voltage ITM = ± 12 A, IG = 50 mA (see Note6) - ±1.6 ±2.1 V dv/dt Critical rate of rise of off-state voltage VDRM = Rated VDRM, IG = 0 TC = 110°C - ±100 - V/µs dv/dt© Critical rise of communication voltage VDRM = Rated VDRM, ITRM = ± 12A TC = 85°C ±5 - - † All voltages are whit respect to Main Terminal 1. |
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