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TIC226C Datasheet(PDF) 3 Page - Comset Semiconductor

Part # TIC226C
Description  SILICON BIDIRECTIONAL TRIODE THYRISTOR
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Manufacturer  COMSET [Comset Semiconductor]
Direct Link  http://comset.halfin.com
Logo COMSET - Comset Semiconductor

TIC226C Datasheet(HTML) 3 Page - Comset Semiconductor

  TIC226C Datasheet HTML 1Page - Comset Semiconductor TIC226C Datasheet HTML 2Page - Comset Semiconductor TIC226C Datasheet HTML 3Page - Comset Semiconductor TIC226C Datasheet HTML 4Page - Comset Semiconductor  
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TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M,
TIC226N, TIC226S
30/10/2012
COMSET SEMICONDUCTORS
3 | 4
SEMICONDUCTORS
Notes:
1. These values apply bidirectionally for any value of resistance between the gate and Main
Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C
derate linearly to 110°C case temperature at the rate of 320 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below)
the rated value of on-state current. Surge may be repeated after the device has returned
to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below)
the rated value of on-state current. Surge may be repeated after the device has returned
to original thermal equilibrium. During the surge, gate control may be lost.
5. This value applies for a maximum averaging time of 20 ms.
6. This parameters must be measured using pulse techniques, tW = ≤1ms, duty cycle ≤ 2 %,
voltage-sensing
contacts, separate from the courrent-carrying contacts are located
within 3.2mm (1/8 inch) from de device body.
7. The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator
with the following characteristics : RG = 100Ω, tp(g) = 20 µs, tr = ≤ 15ns, f = 1 kHz.
MECHANICAL DATA CASE TO-220


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