IS62WV102416BLL-25MI datasheet(6/17 Pages) ISSI

Part #	IS62WV102416BLL-25MI

Description	1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM

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Manufacturer	ISSI [Integrated Silicon Solution, Inc]

Direct Link	http://www.issi.com

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6 / 17 page

6

Integrated Silicon Solution, Inc. — www.issi.com

Rev. A

01/18/08

IS62WV102416ALL

IS62WV102416BLL

IS65WV102416BLL

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

VDD = 2.4V-3.6V

Symbol

Parameter

Test Conditions

Min.

Max.

Unit

VOH

Output HIGH Voltage

VDD = Min., IOH = –1.0 mA

1.8

—

V

VOL

Output LOW Voltage

VDD = Min., IOL = 1.0 mA

—

0.4

V

VIH

Input HIGH Voltage

2.0

VDD + 0.3

V

VIL

Input LOW Voltage(1)

–0.3

0.8

V

ILI

Input Leakage

GND

≤ VIN ≤ VDD

–1

1

µA

ILO

Output Leakage

GND

≤ VOUT ≤ VDD, Outputs Disabled

–1

1

µA

Note:

1. VIL(min.)=–0.3VDC;VIL(min.)=–2.0VAC(pulsewidth <10ns).Not100%tested.

VIH(max.)=VDD+0.3VDC;VIH(max.) =VDD+2.0VAC(pulsewidth<10ns).Not100%tested.

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

VDD = 1.65V-2.2V

Symbol

Parameter

Test Conditions

VDD

Min.

Max.

Unit

VOH

Output HIGH Voltage

IOH = -0.1 mA

1.65-2.2V

Vcc – 0.4V

—

V

VOL

Output LOW Voltage

IOL = 0.1 mA

1.65-2.2V

—

0.2

V

VIH

Input HIGH Voltage

1.65-2.2V

1.4

VDD + 0.2

V

VIL(1)

Input LOW Voltage

1.65-2.2V

–0.2

0.4

V

ILI

Input Leakage

GND

≤ VIN ≤ VDD

–1

1

µA

ILO

Output Leakage

GND

≤ VOUT ≤ VDD, Outputs Disabled

–1

1

µA

Notes:

1. VIL(min.)= –0.3VDC; VIL(min.)= –2.0VAC(pulsewidth<10ns).Not100%tested.

VIH(max.)= VDD+0.3VDC;VIH(max.)= VDD+2.0VAC(pulsewidth<10ns).Not100%tested.

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