FCD380N60E datasheet(3/9 Pages) FAIRCHILD

Part #	FCD380N60E

Description	N-Channel SuperFET짰 II MOSFET 600 V, 10.2 A, 380 m廓

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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FCD380N60E Rev. C1

Typical Performance Characteristics

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs.

Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage

Variation vs. Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

0.1

1

10

20

0.1

1

10

100

*Notes:

1. 250

μs Pulse Test

2. TC = 25

o

C

VDS, Drain-Source Voltage[V]

VGS = 15.0V

10.0V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

2468

10

0.1

1

10

100

-55

o

C

150

o

C

*Notes:

1. VDS = 20V

2. 250

μs Pulse Test

25

o

C

VGS, Gate-Source Voltage[V]

0

5

10

15

20

25

30

0.2

0.3

0.4

0.5

0.6

0.7

0.8

*Note: TC = 25

o

C

VGS = 20V

VGS = 10V

ID, Drain Current [A]

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1

10

100

*Notes:

1. V

GS = 0V

2. 250

μs Pulse Test

150

o

C

V

SD

, Body Diode Forward Voltage [V]

25

o

C

0.1

1

10

100

600

0.5

1

10

100

1000

10000

Coss

Ciss

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

*Note:

1. VGS = 0V

2. f = 1MHz

Crss

VDS, Drain-Source Voltage [V]

0

5

10

15

20

25

30

35

0

2

4

6

8

10

*Note: ID = 5A

VDS = 120V

VDS = 300V

VDS = 480V

Qg, Total Gate Charge [nC]

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