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H5PS1G83JFR Datasheet(PDF) 20 Page - Hynix Semiconductor

Part # H5PS1G83JFR
Description  1Gb DDR2 SDRAM
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Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor

H5PS1G83JFR Datasheet(HTML) 20 Page - Hynix Semiconductor

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Rev. 1.7 / Apr. 2012
20
H5PS1G83JFR Series
4. Electrical Characteristics & AC Timing Specification
(TOPER; VDDQ = 1.8 +/- 0.1V; VDD = 1.8 +/- 0.1V)
Refresh Parameters by Device Density
Note:
1: If refresh timing is violated, data corruption may occur and the data must be re-written with valid data before a valid READ can be
executed.
2. This is an optional feature. For detailed information, please refer to “operating temperature condition” in this data sheet.
DDR2 SDRAM speed bins and tRCD, tRP and tRC for corresponding bin
Note:
1. 8 bank device Precharge All Allowance: tRP for a Precharge All command for an 8 Bank device will equal to tRP+1*tCK, where tRP
are the values for a single bank Precharge, which are shown in the table above.
2. Refer to Specific Notes 32.
3. Refer to Specific Notes 3.
Parameter
Symbol
256Mb 512Mb 1Gb
2Gb
4Gb Units Notes
Refresh to Active/Refresh
command time
tRFC
75
105
127.5
195
327.5
ns
1
Average periodic
refresh interval
tREFI
-40 ℃≤ TCASE ≤ 85
7.8
7.8
7.8
7.8
7.8
us
1
85℃< TCASE ≤ 95
3.9
3.9
3.9
3.9
3.9
us
1,2
Speed
DDR2-800
DDR2-667
DDR2-533
DDR2-400
Units Notes
Parameter
min
min
min
min
min
min
Bin(CL-tRCD-tRP)
5-5-5
6-6-6
4-4-4
5-5-5
4-4-4
3-3-3
CAS Latency
564
543
tCK
tRCD
12.5
15
12
15
15
15
ns
2
tRP*1
12.5
15
12
15
15
15
ns
2
tRAS
45
45
45
45
45
40
ns
2,3
tRC
57.5
60
57
60
60
55
ns
2


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